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ATTINY44A - 8-bit Microcontroller

Download the ATTINY44A datasheet PDF. This datasheet also covers the ATTINY24A variant, as both devices belong to the same 8-bit microcontroller family and are provided as variant models within a single manufacturer datasheet.

General Description

Supply voltage.

Ground.

Port B (PB3:PB0) Port B is a 4-bit bi-directional I/O port with internal pull-up resistors (selected for each bit).

Key Features

  • High Performance, Low Power AVR® 8-bit Microcontroller.
  • Advanced RISC Architecture.
  • 120 Powerful Instructions.
  • Most Single Clock Cycle Execution.
  • 32 x 8 General Purpose Working Registers.
  • Fully Static Operation.
  • High Endurance, Non-volatile Memory Segments.
  • 2K/4K/8K Bytes of In-System, Self-programmable Flash Program Memory.
  • Endurance: 10,000 Write/Erase Cycles.
  • 128/256/512 Bytes of In-System Programmable.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ATTINY24A_ATMELCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
ATtiny44A CMOS 8-bit microcontroller Microchip
ATtiny441 8-bit AVR Microcontroller ATMEL
ATtiny4 8-bit AVR Microcontroller ATMEL
ATtiny4 CMOS 8-bit microcontroller Microchip
ATtiny40 8-bit tinyAVR Microcontroller ATMEL

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
ATTINY44 8-bit Microcontroller
ATtiny43U Microcontroller
ATTINY461 (ATTINYx61) 8-bit Microcontroller
ATTINY461V 8-bit Microcontroller
ATTINY48 (ATTINY48 / ATTINY88) 8-bit Microcontroller

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • High Performance, Low Power AVR® 8-bit Microcontroller • Advanced RISC Architecture – 120 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation • High Endurance, Non-volatile Memory Segments – 2K/4K/8K Bytes of In-System, Self-programmable Flash Program Memory • Endurance: 10,000 Write/Erase Cycles – 128/256/512 Bytes of In-System Programmable EEPROM • Endurance: 100,000 Write/Erase Cycles – 128/256/512 Bytes of Internal SRAM – Data Retention: 20 years at 85°C / 100 years at 25°C – Programming Lock for Self-programming Flash & EEPROM Data Security • Peripheral Features – One 8-bit and One 16-bit Timer/Counter with Two PWM Channels, Each – 10-bit ADC • 8 Single-ended Channels • 12 Differential ADC Channel Pai