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28C256 - 256K 32K x 8 Paged CMOS E2PROM

General Description

The AT28C256 is a high-performance Electrically Erasable and Programmable Read Only Memory.

Its 256K of memory is organized as 32,768 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 440 mW.

Key Features

  • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-Byte Page Write Operation Low Power Dissipation 50 mA Active Current 200 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AT28C256 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-Byte Page Write Operation Low Power Dissipation 50 mA Active Current 200 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 104 or 105 Cycles Data Retention: 10 Years Single 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-Wide Pinout Full Military, Commercial, and Industrial Temperature Ranges 256K (32K x 8) Paged CMOS E2PROM Description The AT28C256 is a high-performance Electrically Erasable and Programmable Read Onl