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Features
• Single Supply for Read and Write: 2.7 to 3.6V • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture
– One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (32K Bytes, 64K Bytes) • Fast Erase Cycle Time – 3 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles
Description
The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.