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AT49LV002N - 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

This page provides the datasheet information for the AT49LV002N, a member of the AT49LV002T 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory family.

Datasheet Summary

Description

The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory.

Its 2 megabits of memory is organized as 262,144 words by 8 bits.

Features

  • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV).
  • Fast Read Access Time.
  • 70 ns.
  • Internal Program Control and Timer.
  • Sector Architecture.
  • One 16K Bytes Boot Block with Programming Lockout.
  • Two 8K Bytes Parameter Blocks.
  • Two Main Memory Blocks (96K, 128K Bytes).
  • Fast Erase Cycle Time.
  • 10 Seconds.
  • Byte-by-Byte Programming.
  • 30 µs/Byte Typical.
  • Hardware Data Protec.

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Datasheet preview – AT49LV002N

Datasheet Details

Part number AT49LV002N
Manufacturer ATMEL
File Size 438.66 KB
Description 2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
Datasheet download datasheet AT49LV002N Datasheet
Additional preview pages of the AT49LV002N datasheet.

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Other Datasheets by ATMEL
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Full PDF Text Transcription

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Two Main Memory Blocks (96K, 128K Bytes) • Fast Erase Cycle Time – 10 Seconds • Byte-by-Byte Programming – 30 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits.
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