ATO AFND1G08U3
The AFND1G08U3 is 1G-bit with spare 32Mbit capacity. The device is offered in 3.3V power supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.| Part No. | AFND1G08U3 |
|---|---|
| Datasheet | AFND1G08U3 Download |
| Manufacturer | ATO |
| Description | 1G-bit NAND FLASH |
| Buy | Stock & Price |
FEATURES
SUMMARY● Power Supply -3.3V Device(AFND1G08U3) 2.7V ~ 3.6V
● Organization -Memory Cell Array : (128M + 4M) x 8bits -Data Register : (2048 + 64) x 8bits
● Automatic Program and Erase -Page Program : (2048 + 64) x 8bits -Block Erase : (128K +4K) x 8bit = 64pages
● Page Read Operation -Page Size : (2048 + 64) x 8bits -Random Access : 25us(Max.) -Serial Page Access : 25ns(Min.)
● Fast Write Cycle Time -Program time : 200us(Typ.) -Block Erase time : 2ms(Typ.)
● Copy-Back PROGRAM Operation - Fast Page copy without external buffering
● Status Register - Normal Status Register (Read/Program/Erase)
● Security features -OTP area, 16Kbytes(8 pages)
● Hardware Data Protection -Program / Erase locked during Power transitions
● Data Integrity -Endurance : 100K Program / Erase Cycles (With 1bit/528byte ECC) -Data Retention : 10 years
● Package -AFND1G08U3 : Pb-Free Package 48-pin TSOP(12 x 20 / 0.5 mm pitch) 48-Ball FBGA: 9.0 x 9.0 x 1.0mm 48-Ball FBGA: 6.5 x 8.0 x 1.0mm 63-Ball FBGA : 9.0 x 11.0 x 1.0mm
● Operating Temperature - Commercial Grade: 0℃~70℃ - Industrial Grade : -40℃~85℃ Rev.06 Nov.
