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FQF8N60 - 600V N-Channel MOSFET

Features

  • Low Intrinsic Capacitances .
  • Excellent Switching Characteristics .
  • Extended Safe Operating Area .
  • Unrivalled Gate Charge :Qg= 40nC (Typ. ).
  • BVDSS=600V,ID=7.5A.
  • RDS(on) :1.32 Ω (Max) @VG=10V.
  • 100% Avalanche Tested GD S G! D !.
  • ◀▲.
  • ! S   TO‐220F    G‐Gate,D‐Drain,S‐Sourse    Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain C.

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Datasheet Details

Part number FQF8N60
Manufacturer AUDLEY
File Size 1.62 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQF8N60 Datasheet

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HIGH VOLTAGE N-Channel MOSFET      FQ F8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 40nC (Typ.) □ BVDSS=600V,ID=7.5A □ RDS(on) :1.
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