AUK Corporation BC808
PNP Silicon Transistor
FEATURES
● Suitable for AF-Driver stage and low power output stages● Complementary pair with BC818 Ordering Information Type NO. BC808 Marking MA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 2.9±0.1 1.12 Max. 0~0.1 KST-2025-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 -0.03 +0.05 1 BC808 (Ta=25°C) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -30 -25 -5 -800 200 150 -55~150 Unit V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter breakdown voltage Base-Emitter Turn On voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO VBE(ON) VCE(sat) ICBO hFE* fT Cob Test Condition IC=-1mA, IB=0 VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCB=-25V, IE=0 VCE=-1V, IC=-100mA VCB=-5V, IE=10mA, f=100MHz VCB=-10V, IE=0, f=1MHz Min.