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DN200F - NPN Silicon Transistor

Features

  • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.2V Typ. @IC/IB=1A/50 ㎃).
  • Suitable for low voltage large current drivers.
  • Complementary pair with DP200F.
  • Switching.

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Datasheet preview – DN200F

Datasheet Details

Part number DN200F
Manufacturer AUK
File Size 243.79 KB
Description NPN Silicon Transistor
Datasheet download datasheet DN200F Datasheet
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Full PDF Text Transcription

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Semiconductor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.2V Typ. @IC/IB=1A/50 ㎃) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application Ordering Information Type NO. DN200F Marking N04 Outline Dimensions DN200F NPN Silicon Transistor Package Code SOT-89 unit : mm KST-2125-002 PIN Connections 1. Base 2. Collector 3. Emitter 1 DN200F Absolute maximum ratings Characteristic Symbol Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC PC PC* TJ Tstg * : When mounted on 40×40×0.8mm ceramic substate Ratings 15 12 5 2 0.
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