• Part: DN500
  • Description: NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
  • Category: Transistor
  • Manufacturer: Kodenshi AUK Group
  • Size: 51.68 KB
Download DN500 Datasheet PDF
Kodenshi AUK Group
DN500
DN500 is NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage) manufactured by Kodenshi AUK Group.
Description - Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150m A) - Suitable for low voltage large current drivers - plementary pair with DP500 - Switching Application Ordering Information Type NO. DN500 Marking DN500 Package Code TO-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9086-002 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VC B O VC E O VE B O IC PC Tj T stg Ratings 15 12 5 5 625 150 -55~150 Unit V V V A m W °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) f T C ob Test Condition IC =50µA, IE=0 IC =1m A, IB=0 IE=50µA, IC =0 VCB=15V, IE=0 VEB=4V, IC =0 VCE=2V, IC =500m A VCE=2V, IC =3A IC =3A, IB=150m A IC =3A, IB=150m A VCB=5V, IC =500m A VCB=10V, IE=0, f=1MHz Min. 15 12 5 160 40 - Typ. - Max. 0.1 0.1 320 0.3 1.2 50 Unit V V V µA µA V V MHz p F KST-9086-002 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2...