DN500
DN500 is NPN Silicon Transistor (Extremely low collector-to-emitter saturation voltage) manufactured by Kodenshi AUK Group.
Description
- Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150m A)
- Suitable for low voltage large current drivers
- plementary pair with DP500
- Switching Application
Ordering Information
Type NO. DN500 Marking DN500 Package Code TO-92
Outline Dimensions unit : mm
PIN Connections 1. Emitter 2. Collector 3. Base
KST-9086-002
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25° C)
Symbol
VC B O VC E O VE B O IC PC Tj T stg
Ratings
15 12 5 5 625 150 -55~150
Unit
V V V A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance
(Ta=25° C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) f T C ob
Test Condition
IC =50µA, IE=0 IC =1m A, IB=0 IE=50µA, IC =0 VCB=15V, IE=0 VEB=4V, IC =0 VCE=2V, IC =500m A VCE=2V, IC =3A IC =3A, IB=150m A IC =3A, IB=150m A VCB=5V, IC =500m A VCB=10V, IE=0, f=1MHz
Min.
15 12 5 160 40
- Typ.
- Max.
0.1 0.1 320 0.3 1.2 50
Unit
V V V µA µA V V MHz p F
KST-9086-002
Electrical Characteristic Curves
Fig. 1 Pc
- Ta Fig. 2...