Download DP500 Datasheet PDF
Kodenshi AUK Group
DP500
DP500 is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Description - Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ. @IC /IB =-3A/-150m A) - Suitable for low voltage large current drivers - Excellent h FE Linearity - plementary pair with DN500 Ordering Information Type NO. DP500 Marking DP500 Package Code T-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9091-000 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings -15 -12 -5 -5 625 150 -55~150 Unit V V V A m W °C °C - : When mounted on 40× 40× 0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 - Test Condition IC=-50µA, I E =0 IC=-1m A, IB=0 IE =-50µA, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100m A VCE=-1V, IC =-3A IC=-3A, IB =-150m A IC=-3A, IB =-150m A VCB=-5V, I C=-500m A VCB=-10V, I E =0, f=1MHz Min. -15 -12 -5 120 40 - Typ. - Max. -1 -1 700 -0.3 -1.2 50 Unit V V V µA µA V V MHz p F h FE2 VCE(sat1) VBE(sat) f T C ob - : h FE rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700 KST-9091-000 Electrical Characteristic...