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DP500 - PNP Silicon Transistor

General Description

Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ.

Suitable for low voltage large current drivers Excellent hFE Linearity

Type NO.

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Semiconductor DP500 PNP Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ. @IC /IB =-3A/-150mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500 Ordering Information Type NO. DP500 Marking DP500 Package Code T-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9091-000 1 DP500 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings -15 -12 -5 -5 625 150 -55~150 Unit V V V A mW °C °C * : When mounted on 40× 40× 0.