AUK Corporation SBT5401F
PNP Silicon Transistor
DESCRIPTION
● General purpose amplifier● High voltage application
FEATURES
● high collector breakdown voltage : VCBO = -160V, VCEO = -150V● Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
● Complementary pair with SBT5551F Ordering Information Type NO. SBT5401F Marking NFN Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2096-000 0.9±0.1 0~0.1 1 SBT5401F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -160 -150 -5 -600 200 150 -55~150 Unit V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current g...