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SDB110Q - Schottky Barrier Diode

Key Features

  • Low power rectified.
  • Silicon epitaxial type.
  • Battery changing diode Ordering Information Type No. SDB110Q Marking S3 Package Code SOD-523 Outline Dimensions unit : mm 0.2 Min. 1.6±0.1 1.2±0.1 0.8±0.1 2 1 1 2 0.6±0.1 0~0.1 PIN Connections 1. Anode 2. Cathode KSD-E009-001 1 SDB110Q Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Junction temperature Storage temperature (Ta=25° C) Symbol VR IFRM IF.

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Semiconductor SDB110Q Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • Battery changing diode Ordering Information Type No. SDB110Q Marking S3 Package Code SOD-523 Outline Dimensions unit : mm 0.2 Min. 1.6±0.1 1.2±0.1 0.8±0.1 2 1 1 2 0.6±0.1 0~0.1 PIN Connections 1. Anode 2. Cathode KSD-E009-001 1 SDB110Q Absolute maximum ratings Characteristic Reverse voltage Repetitive peak forward current Forward current Junction temperature Storage temperature (Ta=25° C) Symbol VR IFRM IF Tj Tstg * Ratings 10 0.5 30 150 -55 ~ 150 Unit V A mA °C °C * : δ = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit rating× 1.