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Semiconductor
SDB110Q
Schottky Barrier Diode
Features
• Low power rectified • Silicon epitaxial type • Battery changing diode
Ordering Information
Type No. SDB110Q Marking S3 Package Code SOD-523
Outline Dimensions
unit : mm
0.2 Min.
1.6±0.1 1.2±0.1
0.8±0.1
2
1
1
2
0.6±0.1
0~0.1
PIN Connections 1. Anode 2. Cathode
KSD-E009-001
1
SDB110Q
Absolute maximum ratings
Characteristic
Reverse voltage Repetitive peak forward current Forward current Junction temperature Storage temperature
(Ta=25° C)
Symbol
VR IFRM IF Tj Tstg
*
Ratings
10 0.5 30 150 -55 ~ 150
Unit
V A mA °C °C
* : δ = D/T =0.33 (T<1S) * : Unit ratings. Total rating=Unit rating× 1.