SJ1117 Datasheet | Kodenshi AUK Group

FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating Ro HS pliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 25 8.4 VGS = 4.5V VGS = 10V 1.8 2.5 1.8 UNIT V n C n C mΩ mΩ V - - - - - - - - ORDERING INFORMATION Device CSD18502Q5B Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel APPLICATIONS - - - DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID = 88A, L = 0.1m H, RG = 25Ω VALUE 40 ±20 100 204 26 167 3.2 - 55 to 150 387 A W °C m J A UNIT V V DESCRIPTION The Nex FET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D IDM PD TJ, TSTG EAS 3 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2 , 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% GATE CHARGE 10 VGS - Gate-to-Source Voltage (V) 12 RDS(on) - On-State Resistance (mΩ) 10 8 6 4 2 0 RDS(on) vs VGS TC = 25°C Id = 30A TC = 125ºC Id = 30A ID = 30A VDS = 20V...