SMN630LD Description
SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET.
SMN630LD Key Features
- Drain-Source breakdown voltage: BVDSS=200V (Min.)
- Low gate charge: Qg=12nC (Typ.)
- Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)
- 100% avalanche tested
- RoHS pliant device
- YWW: Date Code (year, week)