SMN630LD
SMN630LD is Logic Level N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-Source breakdown voltage: BVDSS=200V (Min.)
- Low gate charge: Qg=12n C (Typ.)
- Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)
- 100% avalanche tested
- Ro HS pliant device
Ordering Information
Part Number
Marking
Package
SMN630L
TO-252
TO-252
Marking Information
SMN 630L YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC)
- Drain current (Pulsed)
- Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
Tc=25C Tc=100C
Tstg
- Limited only maximum...