SMNY2Z30 Datasheet | Kodenshi AUK Group

Features - High voltage: BVDDS=300V (Min.) - Low gate charge: Qg=2.9n C (Typ.) - Low drain-source On resistance: RDS(on)=8Ω (Max.) - Built-in protection zener diode - Ro HS pliant device Ordering Information Part Number Marking Package TO-92 TO-92 Marking Information SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (Ta=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Ta=25C Ta=100C IDM IAS EAS IAR EAR PD TJ Tstg - Limited only maximum junction temperature Rev....