SRA2211E
SRA2211E is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- -
- - With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO SRA2211E Marking DR Package Code SOT-523
Outline Dimensions
1.60±0.1. 0.80±0.1. unit :
- Equivalent Circuit
C(OUT) mm
1.00 BSC 1.60±0.1
0.2~0.3
B(IN)
R1
R1 = 10KΩ
E(MON) 0.15 Min. 0.70±0.1 0~0.1 0.1 Min.
PIN Connections 1. Base 2. Emitter 3. Collector
KSR-4031-000
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
-50 -50 -5 -100 150 150 -55 ∼ 150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO h FE VCE(SAT) f T
- Test Condition
VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1m A IC=-10m A, IB=-0.5m A VCE=-10V, IC=-5m A
- Min. Typ. Max.
120 -0.1 250 10 -500 -500...