SRC1210E
SRC1210E is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- -
- - With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRC1210E Marking RA Package Code SOT-523
Outline Dimensions
1.60±0.1. 0.80±0.1. unit : mm
- Equivalent Circuit
C(OUT)
1.00 BSC
1 3
0.2~0.3 B(IN) R1
1.60±0.1
R1 = 4.7KΩ
E(MON) 0.15 Min. 0.70±0.1 0~0.1 0.1 Min.
PIN Connections 1. Base 2. Emitter 3. Collector
KSR-4022-001
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
50 50 5 100 150 150 -55 ~ 150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO h FE VCE(SAT) f T
- Test Condition
VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1m A IC=10m A, IB=0.5m A VCE=10V, IC=5m A
- Min. Typ. Max.
120 0.1 250 4.7 500 500 0.3
- Unit n A n A V MHz...