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STB1132 - PNP Silicon Transistor

General Description

Medium power amplifier

Key Features

  • PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used).
  • Low collector saturation voltage : VCE(sat)=-0.2V(Typ. ).
  • Complementary pair with STD1664 Ordering Information Type NO. STB1132 Marking A1 : hFE rank, monthly code Package Code SOT-89 Outline Dimensions 4.0 0.50±0.1 2.5 -0.3 +0.5 unit : mm -0.3 +0.2 1.00±0.3 3 1.82±0.05 -0.1 +0.2 2 0.52±0.05 0.15 Typ. 4.5 1 0.42±0.05 1.5 -0.1 +0.2 0~0.1 -0.02 +0.04 PIN Connections 1. Base 2. Collector 3. E.

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www.DataSheet4U.com Semiconductor STB1132 PNP Silicon Transistor Description • Medium power amplifier Features • PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.2V(Typ.) • Complementary pair with STD1664 Ordering Information Type NO. STB1132 Marking A1 : hFE rank, monthly code Package Code SOT-89 Outline Dimensions 4.0 0.50±0.1 2.5 -0.3 +0.5 unit : mm -0.3 +0.2 1.00±0.3 3 1.82±0.05 -0.1 +0.2 2 0.52±0.05 0.15 Typ. 4.5 1 0.42±0.05 1.5 -0.1 +0.2 0~0.1 -0.02 +0.04 PIN Connections 1. Base 2. Collector 3. Emitter KST-8001-002 0.42 1 DataSheet 4 U .com www.DataSheet4U.