Datasheet4U Logo Datasheet4U.com

STC601F - NPN Silicon Transistor

Datasheet Summary

Description

General purpose amplifier High voltage application PIN Connection

Features

  • High collector breakdown voltage : VCEO = 100V.
  • Low collector saturation voltage : VCE(sat)=0.5V(MAX. ).
  • “Green” device and RoHS compliant device.
  • Available in full lead (Pb)-free device Ordering Information Type No. Marking Package Code STC601F M75 YWW SOT-89 M75: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Symbol Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Co.

📥 Download Datasheet

Datasheet preview – STC601F

Datasheet Details

Part number STC601F
Manufacturer AUK
File Size 394.87 KB
Description NPN Silicon Transistor
Datasheet download datasheet STC601F Datasheet
Additional preview pages of the STC601F datasheet.

📁 Similar Datasheet

  • STC62WV1024 - VERY LOW POWER VOLTAGE CMOS SRAM (STC)
  • STC62WV12816 - Very Low Power/Voltage CMOS SRAM (STC)
  • STC62WV1M8 - Very Low Power/Voltage CMOS SRAM (STC)
  • STC62WV256 - VERY LOW POWER/VOLTAGE CMOS SRAM (STC)
  • STC62WV25616 - Very Low Power/Voltage CMOS SRAM (STC)
  • STC62WV2568 - Very Low Power/Voltage CMOS SRAM (STC)
  • STC62WV51216 - Very Low Power/Voltage CMOS SRAM (STC)
  • STC62WV5128 - Very Low Power/Voltage CMOS SRAM (STC)
  • STC6301D - N&P-Channel Enhancement Mode MOSFET (STANSON)
  • STC634 - (STCxxx) UP Supervisor Circuits (ETC)
Other Datasheets by AUK

Full PDF Text Transcription

Click to expand full text
STC601F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application PIN Connection Features • High collector breakdown voltage : VCEO = 100V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • “Green” device and RoHS compliant device • Available in full lead (Pb)-free device Ordering Information Type No. Marking Package Code STC601F M75 YWW SOT-89 M75: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Symbol Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature * : Single pulse, tp= 300 ㎲ ** : When mounted on ceramic substrate(250 ㎟×0.
Published: |