STC918K Datasheet | Kodenshi AUK Group

Semiconductor NPN Silicon Transistor Features - High current transition frequency f T=9.0 GHz(Typ.) @VCE=6V, IC=15m A - Low Noise Figure NFmin=1.4d B(Typ.) @1.0 GHz, VCE=8V, IC=3m A - Maximum Stable Gain(MSG)=19d B @1.0 GHz, VCE=6V, IC=10m A - Output third order intercept output(IP3)=29d Bm @ 1.0 GHz,VCE=6V, IC=10m A Ordering Information Type NO. STC918K Marking F4 Package Code SOT-623F Outline Dimensions unit : mm PIN Connections 1. Base 2. Emitter 3. Collector KST-4007-000 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 10 1.5 50 100 150 -55~150 Unit V V V m A m W °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance TC=25°C Symbol BVCBO- 1 BVCEO- 1 ICBO- 1 IEBO- 1 h FE- 1 f T Cob Test Condition IC=100µA, IE=0 IC=100u A, IB=0 VCB=10V, IE=0 VEB=1V, IC=0 VCE=6V, IC=5m A VCE=6V, IE=15m A VCB=1V, IE=0, f=1MHz VCB=5V, IE=0,...