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Semiconductor
STD123ASF
NPN Silicon Transistor
Features
• High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter.
Ordering Information
Type NO. STD123ASF Marking 12A Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1
unit :
mm
1
2.9±0.1 1.90 BSC
3
0.4±0.05
2
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2029-001
0.9±0.1
0~0.1
1
STD123ASF
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10×8×0.
STD123ASF Datasheet
