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STK0160I - Advanced Power MOSFET

Key Features

  • High Voltage: BVDSS=600V(Min. ).
  • Low Crss : Crss=4.3pF(Typ. ).
  • Low gate charge : Qg=4.5nC(Typ. ).
  • Low RDS(on) :RDS(on)=9.3Ω(Typ. ) www. DataSheet4U. com Ordering Information Type NO. STK0160I Marking STK0160 Package Code I-PAK Outline Dimensions 6.40~6.60 5.14~5.64 2.20~2.40 0.40~0.60 unit : mm 1.50 Typ. 1.00 Typ. 5.90~6.30 1.32 Max. 1.80 Typ. 9.00~9.60 9.96 Max. 0.86 Max. 2.30 Typ. 1 2 3 2.30 Typ. 0.60 Max. PIN Connections 1. Gate 2. Drain 3. Source KS.

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Datasheet Details

Part number STK0160I
Manufacturer AUK
File Size 398.62 KB
Description Advanced Power MOSFET
Datasheet download datasheet STK0160I Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor STK0160I Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=4.3pF(Typ.) • Low gate charge : Qg=4.5nC(Typ.) • Low RDS(on) :RDS(on)=9.3Ω(Typ.) www.DataSheet4U.com Ordering Information Type NO. STK0160I Marking STK0160 Package Code I-PAK Outline Dimensions 6.40~6.60 5.14~5.64 2.20~2.40 0.40~0.60 unit : mm 1.50 Typ. 1.00 Typ. 5.90~6.30 1.32 Max. 1.80 Typ. 9.00~9.60 9.96 Max. 0.86 Max. 2.30 Typ. 1 2 3 2.30 Typ. 0.60 Max. PIN Connections 1. Gate 2. Drain 3. Source KSD-T6Q001-000 1 STK0160I Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) www.DataSheet4U.