AUK Corporation STK0380F
Advanced N-Ch Power MOSFET
FEATURES
● Drain-source breakdown voltage: BVDSS=800V (Min.)● Low gate charge: Qg=14.2nC (Typ.)
● Low drain-source On resistance: RDS(on)=3.5Ω (Typ.)
● RoHS compliant device
● 100% avalanche tested Ordering Information Part Number Marking Package STK0380F STK0380 TO-220F-3L GDS TO-220F-3L Marking Information SMN 03T80 YWAWUAKUK SGTFKΔY0YM3MD8DD0 D SDB20D45 Column 1 : Manufacturer Column 2 : Production Information e.g.) GFYMDD -. G : Option Code (H : Halogen Free) -. F : Factory Management Code -. YMDD : Date Code (Year, Month, Date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperat