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STK0380F - Advanced N-Ch Power MOSFET

Key Features

  • Drain-source breakdown voltage: BVDSS=800V (Min. ).
  • Low gate charge: Qg=14.2nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=3.5Ω (Typ. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package STK0380F STK0380 TO-220F-3L GDS TO-220F-3L Marking Information SMN 03T80.

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Full PDF Text Transcription for STK0380F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STK0380F. For precise diagrams, and layout, please refer to the original PDF.

STK0380F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-source breakdown voltage: BVDSS=800V (Min.)  Low gate charge: Qg=14.2nC (Typ.)  Low...

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n voltage: BVDSS=800V (Min.)  Low gate charge: Qg=14.2nC (Typ.)  Low drain-source On resistance: RDS(on)=3.5Ω (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package STK0380F STK0380 TO-220F-3L GDS TO-220F-3L Marking Information SMN 03T80 YWAWUAKUK SGTFKΔY0YM3MD8DD0 D SDB20D45 Column 1 : Manufacturer Column 2 : Production Information e.g.) GFYMDD -. G : Option Code (H : Halogen Free) -. F : Factory Management Code -.

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