Low RDS(on) : 0.30Ω(Typ. )
Ordering Information
Type NO. STK630F Marking STK630
Package Code TO-220F-3L
Outline Dimensions
w
w
w
t a . D
S a
e h
U 4 t e
. c
m o
unit :
mm
PIN Connections 1. Gate 2. Drain 3. Source
KST-H036-002
w
w
w
. D
a
S a t
e e h
U 4 t
m o . c
1
STK630F
Absolute maximum ratings
Characteristic
Drain-source voltage Gate.
Full PDF Text Transcription for STK630F (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STK630F. For precise diagrams, and layout, please refer to the original PDF.
Semiconductor STK630F Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ (Max.) @ VDS=200V. • Low RDS(on) : 0.30Ω(...
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• Low leakage current : 10 ㎂ (Max.) @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. STK630F Marking STK630 Package Code TO-220F-3L Outline Dimensions w w w t a .D S a e h U 4 t e .c m o unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H036-002 w w w .D a S a t e e h U 4 t m o .