Datasheet4U Logo Datasheet4U.com

STK630F - Power MOSFET

Key Features

  • Avalanche rugged technology.
  • Low input capacitance.
  • Low leakage current : 10 ㎂ (Max. ) @ VDS=200V.
  • Low RDS(on) : 0.30Ω(Typ. ) Ordering Information Type NO. STK630F Marking STK630 Package Code TO-220F-3L Outline Dimensions w w w t a . D S a e h U 4 t e . c m o unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H036-002 w w w . D a S a t e e h U 4 t m o . c 1 STK630F Absolute maximum ratings Characteristic Drain-source voltage Gate.

📥 Download Datasheet

Full PDF Text Transcription for STK630F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STK630F. For precise diagrams, and layout, please refer to the original PDF.

Semiconductor STK630F Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ (Max.) @ VDS=200V. • Low RDS(on) : 0.30Ω(...

View more extracted text
• Low leakage current : 10 ㎂ (Max.) @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. STK630F Marking STK630 Package Code TO-220F-3L Outline Dimensions w w w t a .D S a e h U 4 t e .c m o unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H036-002 w w w .D a S a t e e h U 4 t m o .