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STK830F - Advanced Power MOSFET

Key Features

  • Avalanche rugged technology.
  • Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max. ) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ. ) Ordering Information Type NO. STK830F Marking STK830 Package Code TO-220F Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H034-000 1 STK830F Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25℃) Continuous Dr.

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Datasheet Details

Part number STK830F
Manufacturer AUK
File Size 504.41 KB
Description Advanced Power MOSFET
Datasheet download datasheet STK830F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor STK830F Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. STK830F Marking STK830 Package Code TO-220F Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H034-000 1 STK830F Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25℃) Continuous Drain current (Tc=100℃) Drain Current-Pulsed Power Dissipation (Tc=25℃) Linear Derating Factor Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy ① Symbol VDSS VGS ID ID IDM PD ② ① ① EAS IAR EAR dv/dt TJ , Tstg TL Rating 500 ±30 4.5 2.