SUM201MN Overview
SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by bining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
SUM201MN Key Features
- Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive (MOSFET)
- Performance DFN Package
- This is a Halogen-Free Device
SUM201MN Applications
- Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards