SUM201MN - P-Channel MOSFET + PNP BJT

AUK

Key Features

Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor).
Higher Efficiency Extending Battery Life.
Logic Level Gate Drive (MOSFET).
Performance DFN Package BVDSS -20V BVCEO MOSFET RDS(ON) Typ. 48mΩ @ VGS=-4.5V 65mΩ @ VGS=-2.5V PNP BJT BVEBO.
This is a Halogen.
Free Device -20V -5V ID Max -5.3A IC Max -5A.

SUM201MN p-channel mosfet + pnp bjt by AUK - Datasheet Preview

Datasheet Details

Part number	SUM201MN
Manufacturer	AUK
File Size	423.70 KB
Description	P-Channel MOSFET + PNP BJT
Datasheet	SUM201MN Datasheet

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SUM202MN	P-Channel MOSFET + PNP BJT

Full PDF Text Transcription (Reference)

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SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. Features • Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package BVDSS -20V BVCEO MOSFET RDS(ON) Typ. 48mΩ @ VGS=-4.5V 65mΩ @ VGS=-2.5V PNP BJT BVEBO. • This is a Halogen−Free Device -20V -5V ID Max -5.3A IC Max -5A Applications • Power Management in Portable and Battery−Powered Products; i.e.