TARF1502E Datasheet | Kodenshi AUK Group

DESCRIPTION The TARF1502E is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package FEATURES o Low Noise Figure N.F = 1.1d B TYP. @ f=1GHz, VCE=3V, Ic=5m A N.F = 1.5d B TYP. @ f=2GHz, VCE=3V, Ic=5m A o High Gain MSG = 18.5d B TYP. @ f=1GHz, VCE=3V, Ic=15m A MAG = 13d B TYP. @ f=2GHz, VCE=3V, Ic=15m A o High Transition Frequency f T = 12GHz TYP. @ f=2GHz, VCE=3V, Ic=15m A PIN CONFIGURATION PIN NO 1 2 3 SYMBOL B E C DESCRIPTION Base Emitter Collector MARKING : AC1 MAXIMUM RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 CONDITION Open Emitter Open Base Open Collector VALUE 25 12 2.5 35 150 -65 ~ 150 150 Unit V V V m A m W .tachyonics.co.kr - 1/12 - Sep-03-2002 Electrical Characteristics ( TA = 25 SYMBOL VCBO VCEO ICBO IEBO hfe PARAMETER Collector-Base Voltage ) CONDITION VALUE 20 12 25 14 300 100 100 150 12 0.47 GHz p F Unit V V n A n A ICE = 100u A, IE = 0 Collector-Emitter Voltage ICE = 100u A, IB = 0 Collector-Cut-off current Emitter-Cut-off current D.C current Gain Transition Frequency VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, Ic = 15m A VCE = 3V, Ic = 15m A f T Collector-Base Capacitance VCB = 10V, f = 1MHz Performance Characteristics SYMBOL PARAMETER CONDITION VCE=3V, Ic=5m A,f=1GHz [S21]2 VCE=3V, Ic=15m A,f=1GHz Insertion Power Gain VALUE 13.5 15 Unit d B VCE=3V, Ic=5m A,f=2GHz VCE=3V, Ic=15m A,f=2GHz VCE=3V, Ic=5m A,f=1GHz 8 9.5 17 18.5 d B VCE=3V, Ic=5m A,f=2GHz 12 13 1.1 d B VCE=3V, Ic=5m A,f=2GHz VCE=3V, Ic=5m A,f=1GHz 1.5 0.12 0.06 14.5 16 d B VCE=3V, Ic=5m A,f=2GHz VCE=3V, Ic=15m A,f=2GHz 10 11 10 d Bm Maximum Stable Gain VCE=3V, Ic=15m A,f=1GHz MAG Maximum Available Gain VCE=3V, Ic=15m A,f=2GHz VCE=3V, Ic=5m A,f=1GHz NFmin Minium Noise Figure...