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THN420Z - SiGe NPN Transistor

Datasheet Summary

Features

  • s - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 15 mA fT = 20 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 16 dB at VCE = 2 V, IC = 15 mA, f = 1.5 GHz - Low noise figure NF = 1.1 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz.
  • Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Tempe.

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Datasheet Details

Part number THN420Z
Manufacturer AUK
File Size 241.83 KB
Description SiGe NPN Transistor
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Semiconductor THN420Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 15 mA fT = 20 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 16 dB at VCE = 2 V, IC = 15 mA, f = 1.5 GHz - Low noise figure NF = 1.1 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz □ Absolute Maximum Ratings (TA = 25 ℃) Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Sym bol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Caution : Electro Static Discharge sensitive device 13 24 Pin Configuration 1. Base 2. Emitter 3.
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