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THN6301 Datasheet Sige NPN Transistor

Manufacturer: AUK (Kodenshi AUK Group)

Overview: Semiconductor □ Application LNA and wide band amplifier up to GHz.

General Description

Base Emitter Collector □ Available Package Product Package THN6301S SOT-23 THN6301U SOT-323 THN6301Z SOT-343 THN6301E SOT-523 THN6301KF SOT-623F Unit : mm Dimension 2.9ⅹ1.3, 1.2t 2.0ⅹ1.25, 1.0t 2.

Key Features

  • s o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm.
  • hFE Classification Marking AA1 AA2 hFE 125 to 300 80 to 160.
  • Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Voltage VEBO Emitter to Base Breakdown.

Similar Datasheet

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