BC817F
BC817F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Suitable for AF-Driver stage and low power output stages
- plementary pair with BC807F
Ordering Information
Type NO. BC817F Marking NA : h FE rank Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1 unit : mm
2.9±0.1 1.90 BSC
0.4±0.05
0.15±0.05
KST-2087-000
0.9±0.1
0~0.1
PIN Connections 1. Base 2. Emitter 3. Collector
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
50 35 5 800 200 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage Base-Emitter turn on voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCEO VBE(ON) VCE(sat) ICBO h FE- f T Cob
Test Condition
IC=1m A, IE=0 VCE=1V, IC=300m A IC=500m A, IB=50m A VCB=25V, IE=0 VCE=1V, IC=100m A VCB=5V, IC=10m A VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
35 100 100 16 1.2 700 100 630
- Unit
V V m V n A MHz p F
- : h FE rank...
