SBT2222A
SBT2222A is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Low Leakage current
- Low collector saturation voltage enabling low voltage operation
- plementary pair with MMBT2907A
Ordering Information
Type NO. MMBT2222A Marking 1P Package Code SOT-23
Outline Dimensions
2.3~2.5 1.2~1.4 unit : mm
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
1.12 Max.
0.094~0.174
2.8~3.0
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2001-002
0~0.1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
- : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC- Tj Tstg
Ratings
75 40 5 600 350 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO h FE VCE(sat) f T Cob td tr ts tf
Test Condition
IC=10µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCB=75V, IE=0 VCE=10V, IC=10m A IC=150m A, IB=15m A VCE=20V, IC=20m A, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150m Adc, IB1=15m Adc VCC=30Vdc,IC=150m Adc, IB1=IB2=15m Adc
Min. Typ....
