SBT2222F
SBT2222F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Low Leakage current
- Low collector saturation voltage enabling low voltage operation
- plementary pair with SBT2907F
Ordering Information
Type NO. SBT2222F Marking 1B Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1 unit : mm
2.9±0.1 1.90 BSC
0.4±0.05
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2079-000
0.9±0.1
0~0.1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
- : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC
- Ratings
60 30 5 600 350 150 -55~150
Unit
V V V m A m W °C °C
Tj Tstg
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO h FE VCE(sat) f T Cob td tr ts tf
Test Condition
IC=10µA, IE=0 IC=10m A, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=10V, IC=10m A IC=150m A, IB=15m A VCE=20V, IC=20m A, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150m Adc, IB1=15m Adc VCC=30Vdc,IC=150m Adc, IB1=IB2=15m Adc
Min. Typ. Max.
60 30 5 100 250 20 0.4 8 10 25 225...