Download SBT2222F Datasheet PDF
Kodenshi AUK Group
SBT2222F
SBT2222F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features - Low Leakage current - Low collector saturation voltage enabling low voltage operation - plementary pair with SBT2907F Ordering Information Type NO. SBT2222F Marking 1B Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 2.9±0.1 1.90 BSC 0.4±0.05 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2079-000 0.9±0.1 0~0.1 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range - : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°C Symbol VCBO VCEO VEBO IC PC - Ratings 60 30 5 600 350 150 -55~150 Unit V V V m A m W °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO h FE VCE(sat) f T Cob td tr ts tf Test Condition IC=10µA, IE=0 IC=10m A, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=10V, IC=10m A IC=150m A, IB=15m A VCE=20V, IC=20m A, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150m Adc, IB1=15m Adc VCC=30Vdc,IC=150m Adc, IB1=IB2=15m Adc Min. Typ. Max. 60 30 5 100 250 20 0.4 8 10 25 225...