SBT2907
SBT2907 is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Low Leakage current
- Low collector saturation voltage enabling low voltage operation
- plementary pair with SBT2222
Ordering Information
Type NO. SBT2907 Marking 2B Package Code SOT-23
Outline Dimensions
2.3~2.5 1.2~1.4 unit : mm
1.90 Typ.
3 2
0.4 Typ. 0.45~0.60
0.2 Min.
2.8~3.0
KST-2038-001
0.094~0.174
PIN Connections 1. Base 2. Emitter 3. Collector
1.12 Max.
0~0.1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
- : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC- Tj Tstg
Ratings
-60 -40 -5 -600 350 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO h FE VCE(sat) f T Cob ton td tr toff ts tf
Test Condition
IC=-10µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VCE=-10V, IC=-10m A IC=-150m A, IB=-15m A VCE=-5.0V, IC=-20m A, f=100MHz VCB=-10V, IE=0, f=1MHz VCC=-30Vdc,IC=-150m Adc, IB1=-15m Adc
Min. Typ....
