SBT2907AUF
SBT2907AUF is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Low Leakage current
- Low collector saturation voltage enabling low voltage operation
- plementary pair with SBT2222AUF
Ordering Information
Type NO. SBT2907AUF Marking F2 Package Code SOT-323F
Outline Dimensions
2.0~2.2 0.30~0.40 1.2~1.4 unit : mm
1.30 BSC
1.9~2.1
1 3 2
0.06~0.16
0.55~0.8
KST-3044-002
0~0.1
PIN Connections 1. Base 2. Emitter 3. Collector
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
- : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC- Tj Tstg
Ratings
-60 -60 -5 -600 350 150 -55~150
Unit
V V V m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICBO h FE VCE(sat) f T Cob ton td tr toff ts tf
Test Condition
IC=-10µA, IE=0 IC=-1m A, IB=0 IE=-10µA, IC=0 VCB=-60V, IE=0 VCE=-10V, IC=-10m A IC=-150m A, IB=-15m A VCE=-5.0V, IC=-20m A, f=100MHz VCB=-10V, IE=0, f=1MHz VCC=-30Vdc,IC=-150m Adc, IB1=-15m Adc
Min. Typ. Max.
-60 -60 -5 100 200 -20 -0.4 8 45 10 40 100 80 30
Unit
V V V n A V MHz p F ns ns ns ns ns ns
VCC=-6.0Vdc,IC=-150m Adc, IB1=IB2=-15m...