SBT3904UF
SBT3904UF is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Low collector saturation voltage
- Collector output capacitance
- plementary pair with SBT3906UF
Ordering Information
Type NO. SBT3904UF Marking 1A Package Code SOT-323F
Outline Dimensions unit : mm
2.1±0.1 0.30~0.40 0.70-0.15
+0.1
1.30±0.1
1.30 BSC
2.0±0.1
1 3 2
0.11±0.05
KST-3066-000
0~0.1
PIN Connections 1. Base 2. Emitter 3. Collector
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range
Ta=25°C
Symbol
VCBO VCEO VEBO IC PC- Tj Tstg
Ratings
60 40 6 200 350 150 -55~150
Unit
V V V m A m W °C °C
- : Package mounted on 99.5% alumina 10×8×0.6mm
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time
Ta=25°C
Symbol
BVCBO BVCEO BVEBO ICEX h FE VCE(sat) f T Cob td tr ts tf
Test Condition
IC=10µA, IE=0 IC=1m A, IB=0 IE=10µA, IC=0 VCE=30V, VEB=3V VCE=1V, IC=10m A IC=50m A, IB=5m A VCE=20V, IC=10m A, f=100MHz VCB=5V, IE=0, f=1MHz VCC=3Vdc, VBE(off)=0.5Vdc. IC=10m Adc, IB1=1m Adc VCC=3Vdc,IC=10m Adc, IB1=IB2=1m Adc
Min. Typ. Max.
60 40 6 100 300 50 300 0.3 4 35 35 200 50
Unit
V V V n A V MHz p F ns ns ns...