SBT42F
SBT42F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Collector-Emitter voltage VCEO=SBT42F : 300V
- plementary pair with SBT92F
Ordering Information
Type NO. SBT42F Marking M1A Package Code SOT-23F
Outline Dimensions unit : mm
2.4±0.1 1.6±0.1
2.9±0.1 1.90 BSC
0.4±0.05
0.15±0.05
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2077-000
0.9±0.1
0~0.1
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter Current Collector dissipation Junction temperature Storage temperature
- : Package Mounted on 99.5% Alumina 10×8×0.6mm
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC IE PC- Tj Tstg
Ratings
300 300 6 500 -500 350 150 -55~150
Unit
V V V m A m A m W °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE
- -
- Test Condition
IC=100µA, IE=0 IC=1m A, IB=0 IE=100µA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 VCE=10V, IC=30m A IC=20m A, IB=2m A IC=20m A, IB=2m A VCE=20V, IC=10m A VCB=20V, IE=0, f=1MHz
Min. Typ. Max.
300 300 6 40 50 0.1 0.1 0.5 0.9...