ND39G1 Datasheet | AVA

DESCRIPTION - - THE GREEN SOURCE COLOR DEVICES ARE MADE WITH In Ga Al P ON Ga As .. SUBSTRATE LIGHT EMITTING DIODE FEATURES - - - - - - - - - 0.39 inch (10.0 mm) DIGIT HEIGHT CONTINUOUS UNIFORM SEGMENTS LOW POWER REQUIREMENT EXCELLENT CHARACTERS APPEARANCE HIGH BRIGHTNESS & HIGH CONTRAST WIDE VIEWING ANGLE SOLID STATE RELIABILITY CATEGORIZED FOR LUMINOUS INTENSITY THE CHARACTERISTIC OF ENCAPXULATION METHOD IS USE THE CHIP ON BORAD OR SMT PART NO.: ND39G1 PAGE: 2 of 6 AVA TECHNOLOGY CO. PACKAGE DIMENSIONS .. NOTES: All dimensions are in millimeters. Tolerances are ± 0.25-mm (0.01“) unless otherwise noted. INTERNAL CIRCUIT DIAGRAM PART NO.: ND39G1 PAGE: 3 of 6 AVA TECHNOLOGY CO. Selection Gulde Iv (mcd) @10m A Min. ND39G1AYG-S ND39G1CYG-S GREEN (In Ga Al P) GREEN (In Ga Al P) WHITE DIFFUSED WHITE DIFFUSED 11.08 11.08 Typ. 12.04 12.04 mon Anode mon Cathode Part No. Dice Lens Type Description .. ABSOLUTE MAXIMUM RATING AT Ta = 25o C PARAMETER Power Dissipation Per Segment DC Froward Current Peak Froward Current Reverse Voltage Per Segment Operating Temperature Range MAXIMUM RATING 105 25 140 5 -400C to +850C UNIT m W m A m A V ELECTRICAL / OPTICAL CHARACTERISTICS AT Ta = 25o C PARAMETER Peak Emission Wavelength Spectral Line Half-Width Dominant Wavelength Forward Voltage Per Segment Reverse Current Per Segment SYMBOL λp ∆λ λd VF IR MIN. TYP. 573 30 570 2.15 MAX. UNIT TEST CONDITION nm IF=20m A nm IF=20m A nm IF=20m A V IF=20m A VR=5V μA 2.5 10 Note: Luminous intensity is measured with a light sensor and filter bination that approximates the CIE (mision Internationale De L’Eclairage) eye-response curve. PART NO.: ND39G1 PAGE: 4 of 6 AVA TECHNOLOGY CO. TYPICAL ELECTRICAL / OPTICAL CHARACTERISTIC CURVES (25o C Ambient Temperature Unless Otherwise Noted) RELATIVE...