HEDS-9200 Datasheet | AVAGO TECHNOLOGIES

Description The following cumulative test results have been obtained from testing performed at Avago Technologies in accordance with the latest revision of MIL- STD-883. Avago tests parts at the absolute maximum rated conditions remended for the device. The actual performance you obtain from Avago parts depends on the electrical and environmental characteristics of your application but will probably be better than the performance outlined in Table 1. Failure Rate Prediction The failure rate of semiconductor devices is determined by the junction temperature of the device. The relationship between ambient temperature and actual junction temperature is given by the following: TJ (°C) = TA (°C) + θJA PAVG where TA = ambient temperature in °C θJA = thermal resistance of junction-to-ambient in °C/watt PAVG = average power dissipated in watts The estimated MTBF and failure rate at temperatures lower than the actual stress temperature can be determined by using an Arrhenius model for temperature acceleration. Results of such calculations are shown in the table on the following page using an activation energy of 0.43 e V (reference MIL-HDBK-217). Table 1. Life Tests Demonstrated Performance Point Typical Performance Test Name High Temperature Operating Life Stress Test Conditions VCC = 5.5 V, VA = VB = 3.5 V TA = 100°C 1000 hours VCC = 5.5 V VA = VB = 3.5 V 1,000 hours TA = 85°C RH = 85% Total Device Hrs. 1,405,000 Units Tested 1,405 Total Failed 2 MTBF 702,500 Failure Rate (% /1K Hours) 0.142 Temperature Humidity Operating Life 1,495,000 1,495 149,500 Table 2. Point Typical Performance [1] in Time Ambient Temperature (°C) +100 +90 +80 +70 +60 +50 +40 +30 +20 Junction Temperature (°C) +110 +100 +90 +80 +70 +60 +50 +40 +30 MTBF [1] 703,000 996,000 1,440,000 2,126,000 3,210,000 4,968,000 7,901,000 12,942,000 21,903,000 Failure Rate (%/1K Hours) 0.142 0.100 0.069 0.047 0.031 0.020 0.013 0.008 0.005 Performance in Time [2] (90% Confidence) MTBF [2]...