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AT-31033 - High Performance NPN Silicon Bipolar Transistor

Download the AT-31033 datasheet PDF. This datasheet also covers the AT-31011 variant, as both devices belong to the same high performance npn silicon bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets.

Key Features

  • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation.
  • 900 MHz Performance: AT-31011: 0.9 dB NF, 13 dB GA AT-31033: 0.9 dB NF, 11 dB GA.
  • Characterized for End-Of-Life Battery Use (2.7 V).
  • SOT-143 SMT Plastic Package.
  • Tape-And-Reel Packaging Option Available.
  • Lead-free Pin Connections and Package Marking.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT-31011-AVAGO.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Avago Technologies (now Broadcom)

Part Number Description
AT-31011 High Performance NPN Silicon Bipolar Transistor
AT-30511 High Performance NPN Silicon Bipolar Transistors
AT-30533 High Performance NPN Silicon Bipolar Transistors
AT-32011 High Performance NPN Silicon Bipolar Transistor
AT-32032 High Performance NPN Silicon Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AT-31011, AT-31033 Low Current, High Performance NPN  Silicon Bipolar Transistor Data Sheet Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT31033 uses the 3 lead SOT‑23, while the AT-31011 places the same die in the higher performance 4 lead SOT‑143. Both packages are industry standards compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a mul­tiplicity of tasks.