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AT-32063 - High Performance NPN Silicon Bipolar Transistor

General Description

The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.

The devices are unconnected, allowing flexibility in design.

The pin-out is convenient for cascode amplifier designs.

Key Features

  • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation.
  • 900 MHz Performance: 1.1 dB NF, 14.5 dB GA.
  • Characterized for End-of-Life Battery Use (2.7 V).
  • SOT-363 (SC-70) Plastic Package.
  • Tape-and-Reel Packaging Option Available.
  • Lead-free Surface Mount Package SOT-363 (SC-70) II Pin Connections and Package Marking 1 B1 2 E1 3 C2 6 C1 5 E2 4 B2 AT-32063 Absolute Maximum Ratings[1] Symbol Param.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.