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ATF-36077 Datasheet Ultra Low Noise Pseudomorphic Hemt

Manufacturer: Avago Technologies (now Broadcom)

Overview: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet.

General Description

AvagoTechnologies'ATF-36077isanultra-low-noisePseudo­ morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package.

Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB.

Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input imped­ance match, making the design of broadband low noise ampli­fiers much easier.

Key Features

  • PHEMT Technology.
  • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz.
  • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz.
  • Low Para­sitic Ceramic Microstrip Package.
  • Tape-and-Reel Packing Option Available.

ATF-36077 Distributor