Datasheet Details
| Part number | ATF-36077 |
|---|---|
| Manufacturer | Avago Technologies (now Broadcom) |
| File Size | 108.77 KB |
| Description | Ultra Low Noise Pseudomorphic HEMT |
| Datasheet |
 ATF-36077 Datasheet
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General Description
AvagoTechnologies'ATF-36077isanultra-low-noisePseudo morphic High Electron Mobility Transistor (PHEMT), packaged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB.
Key Features
- PHEMT Technology.
- Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz.
- High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz.
- Low Parasitic Ceramic Microstrip Package.
- Tape-and-Reel Packing Option Available.