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MGA-412P8 - GaAs Enhancement-mode pHEMT Power Amplifier optimized

General Description

Avago Technologies’s MGA-412P8 linear power amplifier is designed for applications in the (1.7-3) GHz frequency range.

Key Features

  • Advanced GaAs E-pHEMT.
  • Integrated power detector & power down functions.
  • High efficiency.
  • Single +3.3V Supply.
  • Small Footprint: 2x2mm2.
  • Low Profile: 0.8mm max. Specifications.
  • At 2.452 GHz; 3.3V (Typ. ) :.
  • Gain: 25.5 dB.
  • P1dB: 25.3 dBm.
  • Pout linear with IEEE 802.11g OFDM modulation @54Mbps data rate: 19.0 dBm @ 3% EVM.
  • Current @19dBm linear Pout: (54Mbps) : 95mA.
  • Reverse Isolation (typ):.

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MGA-412P8 GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications Data Sheet Description Avago Technologies’s MGA-412P8 linear power amplifier is designed for applications in the (1.7-3) GHz frequency range. The amplifier is optimized for IEEE 802.11b/g WLAN applications and has a best-inclass efficiency (PAE) of 25.5% (54Mbps OFDM) achieved through the use of Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT process. The MGA-412P8 is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-lead leadless-plastic-chip-carrier (LPCC) package. The compact footprint, low profile and excellent thermal efficiency of the LPCC package makes the MGA-412P8 an ideal choice as a power amplifier for mobile IEEE 802.11b/g WLAN applications. It achieves +19.