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AW3112
Feb 2019 V1.2
30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET
FEATURES
GENERAL DESCRIPTION
l
Low collector-emitter saturation voltage Large current capability High current gain DFN2mm×2mm-6L Package
tia The AW3112 is 30V PNP power bipolar transistor
using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base.
RoHS compliant
n The AW3112 has low VCESAT and high current gain.
It is suitable for linear regulator in battery charging
APPLICATIONS
Battery Charging Portable Device Power Management
application.
e AW3112 is available in DFN2mm×2mm×0.75mm-
6L package.
AW3112 Datasheet
