AW3112 - PNP NMOSFET

AWINIC

General Description

l Low collector-emitter saturation voltage Large current capability High current gain

using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base.

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AW3112 pnp nmosfet by AWINIC - Datasheet Preview

Datasheet Details

Part number	AW3112
Manufacturer	AWINIC
File Size	868.23 KB
Description	PNP NMOSFET
Datasheet	AW3112 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AW3112 Feb 2019 V1.2 30V/3A PNP Low VCESAT BJT, Integrated with 20V Trench NMOSFET FEATURES GENERAL DESCRIPTION l  Low collector-emitter saturation voltage  Large current capability  High current gain  DFN2mm×2mm-6L Package tia The AW3112 is 30V PNP power bipolar transistor using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base.  RoHS compliant n The AW3112 has low VCESAT and high current gain. It is suitable for linear regulator in battery charging APPLICATIONS Battery Charging Portable Device Power Management application. e AW3112 is available in DFN2mm×2mm×0.75mm- 6L package.