AW3112 Overview
Description
l - Low collector-emitter saturation voltage - Large current capability - High current gain - DFN2mm×2mm-6L Package tia The AW3112 is 30V PNP power bipolar transistor using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base. RoHS compliant n The AW3112 has low VCESAT and high current gain.