AW3112 Description
l Low collector-emitter saturation voltage Large current capability High current gain DFN2mm×2mm-6L Package tia The AW3112 is 30V PNP power bipolar transistor using epitaxial planar technology, integrating with a 20V trench NMOSFET as a switch transistor of base. RoHS pliant n The AW3112 has low VCESAT and high current gain. It is suitable for linear regulator in battery charging APPLICATIONS Battery Charging...
AW3112 Key Features
- Low collector-emitter saturation voltage
- Large current capability
- High current gain
- DFN2mm×2mm-6L Package
- RoHS pliant