GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES
3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability PIN ASSIGNMENT The package of ec o h.c m 1/8 Axelite Confidential Materials, do not copy or distribute without written consent. AM1030N ORDER/MARKING INFORMATION Order Information Top Marking Logo AM1030N X X Package Type E: SOT223-3L Packing A : Taping AM 1 0 3 0 N Y WW X Part number ID code:internal WW:01~52 Year: A=2010 1=2011 ABSOLUTE MAXIMUM RATINGS
Characteristics D...
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