AXElite AM2301
P-Channel Enhancement Mode MOSFET
FEATURES
z PinDESCRIPTION
Top View D -20V/-2.5A, RDS(ON)= 85mΩ (typ.) @ VGS= -4.5V RDS(ON)= 110mΩ (typ.) @ VGS= -2.5V z z Super High Dense Cell Design Reliable and Rugged G S SOT-23 SAPPLICATIONS
z Power Management in Notebook Computer, € Portable Equipment and Battery `R●yÑb Powered Systems. G VÛmw w ww ot f o g . ec o h.c D P Channel MOSFET m Ordering and Marking Information A M2301 Package R : SOT23-3L Packing Packing Package Blank : Tube A : Taping AM2301 : A1XXX XXX – Date Code AM2301ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Notes: (TA=25°C Unless Otherwise Noted) Rating -20 ±12 -2.5 -10 -1.5 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 W °C/W V A A °C Parameter Drain-Source Voltage Gate-Source Voltage Continue Drain Current Pulsed Drain Current Diode continuous forward current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 2 Unit *Surface Mounted on 1in pad area, t ≤ 10sec.ELECTRICAL CHARACTERISTICS
Symbol Parameter (TA=25°C Unless Otherwise Noted) AM2301 Min.