ADPR35B12CSNT
Features
Low RDS(on) Tj ,op = 150°C Blocking voltage 1200V Low Switching Losses Low Inductive Design Si C High Performance Chip
Applications
- Automotive Applications
- Electrical Vehicles (x EV)
- mercial Agriculture Vehicles
- All-Terrain Vehicles
- Motor Drives
- Servo Drives
- UPS Drives
Mechanical Features
pact design UL 94 Module frame Temperature sensor included Pb-free device and Ro HS pliant Guiding elements for PCB and cooler assembly Sintered Ag Die attachment
Preliminary Datasheet
-1-
V0.1, 2022/12
FEATURES
High speed, low loss Si C module High reliability, high durability module
Inner Circuit Diagram
Preliminary Datasheet
-2-
V0.1, 2022/12
MOSEFT
▍Maximum Rated Values
Parameter
Drain-source voltage
Tj = 25°C
Conditions
Gate-source voltage
DC drain current
VGS = 15 V, TC = 70°C, Tj = 175°C
Pulsed drain current
Verified by design, tp limited by Tj, max
Symbol
VDSS VGS ID nom ID pulse
Values
1200 -5/+20
450...
