AEPR20B12C1LT
Features
Low RDS(on) Tj op = 150°C Blocking voltage 1200V Low Switching Losses Low Inductive Design Si C High Performance Chip
Mechanical Features
pact design 4.2KV DC Insulation UL 94 Module frame Temperature sense included Direct Water Cooling Base Plate Easy to Integrate 6-pack Topology Pb-free device and Ro HS pliant Guiding elements for PCB and cooler assembly
Preliminary Datasheet
-1-
V0.1, 2023/01
FEATURES
High speed, low loss Si C module High reliability, high durability module
Circuit Diagram
Preliminary Datasheet
-2-
V0.1, 2023/01
MOSFET
▍Maximum Rated Values
Parameter
Drain-source voltage
Tj = 25°C
Conditions
Gate-source voltage
DC drain current
VGS = 15 V, TF = 70°C, Tj = 175°C
Pulsed drain current tp limited by Tj, max
Symbol
VDSS VGS ID nom ID pulse
Values
1200 -5/+20
400 800
Unit
▍Characteristics Values
Parameter
Conditions
Drain-source on resistance
ID = 400 A, VGS = 15 V
ID = 400 A, VGS = 15 V
ID = 400...
