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RM24C256DS - 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus

General Description

The Adesto® RM24C256DS is a 256Kbit, serial EEPROM memory device that utilizes Adesto's CBRAM® resistive technology.

The memory devices use a single lowvoltage supply ranging from 1.65V to 3.6V.

085B 11/2016 The Adesto® I2C device is accessed through a 2-wire I2C com

Key Features

  • Advance Datasheet.
  • Memory array: 256Kbit non-volatile serial EEPROM memory.
  • Single supply voltage: 1.65V - 3.6V.
  • 2-wire I2C interface.
  • Compatible with I2C bus modes: -100kHz -400kHz -1MHz.
  • Page size: 64 bytes -Byte and Page Write from 1 to 64 bytes.
  • 128-byte, One-Time Programmable (OTP) Security Register - 64 bytes factory programmed with a unique identifier - 64 bytes user programmable.
  • Low Energy Byte Write -Byte Write consuming 50 nJ.
  • Low power.

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Datasheet Details

Part number RM24C256DS
Manufacturer Adesto
File Size 1.29 MB
Description 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus
Datasheet download datasheet RM24C256DS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM24C256DS 256-Kbit 1.65V Minimum Non-volatile Serial EEPROM I2C Bus  Features Advance Datasheet  Memory array: 256Kbit non-volatile serial EEPROM memory  Single supply voltage: 1.65V - 3.6V  2-wire I2C interface  Compatible with I2C bus modes: -100kHz -400kHz -1MHz  Page size: 64 bytes -Byte and Page Write from 1 to 64 bytes  128-byte, One-Time Programmable (OTP) Security Register - 64 bytes factory programmed with a unique identifier - 64 bytes user programmable  Low Energy Byte Write -Byte Write consuming 50 nJ  Low power consumption -0.25 mA active Read current -1.0 mA active Write current -1.0 µA Standby current  Fast Write -Page Write in 1.