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ALD111933 - MOSFET

Description

The ALD111933 is a high precision monolithic dual N-Channel Enhancement Mode Matched Pair MOSFET Array matched at the factory using ALD’s proven EPAD® CMOS technology.

This device is intended for precision nano-watt, low voltage, small signal applications.

Features

  • a pecision matched +3.30V threshold voltage for each of the dual MOSFET devices as well as a max. offset voltage of 20mV. These two key features enable extremely low power (nW) precision comparator circuit functions with the threshold voltage itself being used as a zero (near-zero drain current) power coarse voltage reference. ALD111933 MOSFETs are designed and built with exceptional device electrical characteristics matching. Since these devices are on the same monolithic chip, they also exhibi.

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Datasheet Details

Part number ALD111933
Manufacturer Advanced Linear Devices
File Size 90.82 KB
Description MOSFET
Datasheet download datasheet ALD111933 Datasheet
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Full PDF Text Transcription

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ADVANCED LINEAR DEVICES, INC. DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY e TM EPAD ENA ® B L E D ALD111933 VGS(th)= +3.30V GENERAL DESCRIPTION The ALD111933 is a high precision monolithic dual N-Channel Enhancement Mode Matched Pair MOSFET Array matched at the factory using ALD’s proven EPAD® CMOS technology. This device is intended for precision nano-watt, low voltage, small signal applications. ALD111933 features a pecision matched +3.30V threshold voltage for each of the dual MOSFET devices as well as a max. offset voltage of 20mV. These two key features enable extremely low power (nW) precision comparator circuit functions with the threshold voltage itself being used as a zero (near-zero drain current) power coarse voltage reference.
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