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ALD114835 - QUAD/DUAL N-CHANNEL MOSFET ARRAY

General Description

ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology.

These devices are intended for low voltage, small signal applications.

Key Features

  • Depletion mode (normally ON).
  • Precision Gate Threshold Voltages: -3.50V +/- 0.05V.
  • Nominal RDS(ON) @ VGS = 0.0V of 540Ω.
  • Matched MOSFET-to-MOSFET characteristics.
  • Tight lot-to-lot parametric control.
  • Low input capacitance.
  • VGS(th) match (VOS).
  • 20mV.
  • High input impedance.
  • 1012Ω typical.
  • Positive, zero, and negative VGS(th) temperature coefficient.
  • DC current gain >108.
  • Low input.

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Datasheet Details

Part number ALD114835
Manufacturer Advanced Linear Devices
File Size 106.42 KB
Description QUAD/DUAL N-CHANNEL MOSFET ARRAY
Datasheet download datasheet ALD114835 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS(th)= -3.50V GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but could be turned off or modulated when system power supply is turned on.